| PART |
Description |
Maker |
| SDA9254-2 SDA92542 SDA9254-2GEG |
Triple TV SAM
From old datasheet system
2.6 MBit Dynamic Sequential Access Memory for Television Applications (TV-SAM) with On-chip Noise Reduction Filter
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| P5DF081HN P5DF081UA P5DF081X0 |
MIFARE SAM AV2 or AV2.6, HVQFN32 package
MIFARE SAM AV2 or AV2.6, wafer
MIFARE SAM AV2 or AV2.6, PCM1.1 module
|
NXP Semiconductors
|
| EPS448 |
SAM EPLD / Stand-Alone Microsequencer
|
Altera Corporation
|
| SMJ44C251B SMJ44C251B-10HJM SMJ44C251B-10HMM SMJ44 |
256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
|
Austin Semiconductor
|
| BFG67_XR BFG67 BFG67_X BFG67X BFG67XR BFG67/XR BFG |
NPN 8 GHz wideband transistors
NPN 8GHz wideband transistor(NPN 8G赫兹 宽带晶体
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| UPC2726T00 UPC2726T-E3 UPC2726T |
1.6 GHz DIFFERENTIAL WIDEBAND SILICON WIDEBAND SILICON
|
NEC[NEC]
|
| BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| BFS520 |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistor
|
Philips Semiconductors
NXP Semiconductors
|
| BFR93 |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| EL2126CS-T EL2126CW-T EL2126CW-T7A EL2126CW-T7 EL2 |
Ultra-Low Noise/ Low Power/ Wideband Amplifier
Op Amp, 100MHz Wideband, Ultra Low Noise 1.3nV/√Hz, Low Power, 2.5-15VDC
Ultra-Low Noise Low Power Wideband Amplifier
|
INTERSIL[Intersil Corporation]
|
